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30V-250V SGT N Channel Power MOSFET
1.Part No.：WMK340N20HG2
2.Package：TO-220
3.VDS(V)：200
4.Vgs Max(V)：±20
5.ID(A)@TA=25℃(Max.)：50
6.VGS(th)(V)(Typ.)：3
7.Rds(on)(mΩ)@Vgs=10V(Max.)：34
8.Rds(on)(mΩ)@Vgs=4.5V(Max.)：
Description WMK340N20HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.
Features
? VDS = 200V,
ID = 50A RDS(on) < 34mΩ @ VGS = 10V
? High Speed Power Switching
? 100% EAS Guaranteed
? Low Gate Charge
Applications
? DC/DC Converter
? LED Backlighting
? Motor Control
