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溝槽型Trench MOSFET

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維安WMO20N06T1 60V 20A

參數(shù)一：VDS= 60V ID = 20A
參數(shù)二：60V N-Channel
參數(shù)三：RDS(on) < 46mΩ @ VGS = 10V
參數(shù)四：TO252

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產(chǎn)品詳情

上海維安半導體推出超結650V MOSFET，超結高壓MOS管找華芯旺維安代理

Description WMO20N06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
? VDS= 60V, ID = 20A
RDS(on) < 46mΩ @ VGS = 10V
RDS(on) < 52mΩ @ VGS = 4.5V
? Green Device Available
? Low Gate Charge
? Advanced High Cell Density Trench Technology
? 100% EAS Guaranteed Applications
? Power Management Switches
? DC/DC Converters Absolute Maximum Ratings